This article proposes a termination design for 4H-SiC Schottky Barrier Diodes (SBDs) that integrates uniformly distributed multiple P-type micro-island with multi-step. This design eliminates the need for high-energy ion implantation, reducing process costs. By optimizing the length (LP), spacing (SP), and number (NP) of the micro-island, along with the step lengths (Lstep) and numbers (nstep) in the end relaxation region, the device reverse performance can be effectively improved. The study demonstrates that with an LP = 12 μm, SP = 3 μm, NP = 5, Lstep =8 μm, and nstep = 3, the electric field distribution is more uniform under a reverse voltage of 1200 V, achieving a terminal efficiency exceeding 90%. Furthermore, this configuration reduces the terminal area by over 16% compared to a structure comprising solely uniformly distributed P-type micro-islands.