Device Parameter Changes Caused by Manufacturing Fluctuations of Deep Submicron MOSFET's
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SITTE, R
DIMITRIJEV, S
HARRISON, HB
DIMITRIJEV, S
HARRISON, HB
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1994
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604087 bytes
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IEEE Transactions on Electron Devices
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41
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11
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© 1994 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
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Agricultural, veterinary and food sciences
Electronics, sensors and digital hardware