Charge Trapping Properties of 3C- and 4H-SiC MOS Capacitors With Nitrided Gate Oxides

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Arora, Rajan
Rozen, John
Fleetwood, Daniel M
Galloway, Kenneth F
Zhang, C Xuan
Han, Jisheng
Dimitrijev, Sima
Kong, Fred
Feldman, Leonard C
Pantelides, Sokrates T
Schrimpf, Ronald D
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2009
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Abstract

Silicon-carbide-based MOS capacitors were formed on either 3C (epitaxial on Si) or 4H substrates and using SiO2 gate dielectrics both with and without interfacial nitrogen. The charge trapping properties of these structures were examined after exposure to ionizing radiation. In all cases interfacial nitrogen results in improved trap density and increased oxide charge trapping. For equivalent nitrogen content, 3C-based devices exhibit more charge trapping than the 4H-based equivalents.

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IEEE Transactions on Nuclear Science

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56

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6

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© 2009 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from IEEE.

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Other physical sciences

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Microelectronics

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