Sulfur passivation of surface electrons in highly Mg-doped InN
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Chai, J.
McConville, C.
Durbin, S.
Veal, T.
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Abstract
Electron accumulation with a sheet density greater than 1013 cm−2 usually occurs at InN surfaces. Here, the effects of treatment with ammonium sulfide ((NH4)2Sx) on the surface electronic properties of highly Mg-doped InN (>4×1018 cm−3) have been investigated with high resolution x-ray photoemission spectroscopy. The valence band photoemission spectra show that the surface Fermi level decreases by approximately 0.08 eV with (NH4)2Sx treatment, resulting in a decrease of the downward band bending and up to a 70% reduction in the surface electron sheet density.
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Journal of Applied Physics
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114
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10
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© 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Journal of Applied Physics 114, 103702 (2013) and may be found at https://doi.org/10.1063/1.4820483
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Subject
Compound Semiconductors
Mathematical Sciences
Physical Sciences
Engineering