A Compact Model for SiC Schottky Barrier Diodes Based on the Fundamental Current Mechanisms
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Dimitrijev, Sima
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Abstract
We develop a complete compact model to describe the forward current, reverse current, and capacitance of SiC Schottky barrier diodes. The model is based on the fundamental current mechanisms of thermionic emission and tunneling, and is usable over a large range of voltages, temperatures, and for a large range of device parameters. We also demonstrate good agreement with measured data. Furthermore, the development of this model outlines a methodology for transforming a tunneling equation into a compact form without numerical integration - this methodology can potentially be applied to other device structures.
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IEEE Journal of the Electron Devices Society
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8
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1
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© The Author(s) 2020. This is an Open Access article distributed under the terms of the Creative Commons Attribution 4.0 International License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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Electronics, sensors and digital hardware
Nanotechnology
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Engineering
Mathematical model
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Nicholls, JR; Dimitrijev, S, A Compact Model for SiC Schottky Barrier Diodes Based on the Fundamental Current Mechanisms, IEEE Journal of the Electron Devices Society, 2020, 8 (1), pp. 545-553