Giant piezoresistive effect by optoelectronic coupling in a heterojunction

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Thanh, Nguyen
Toan, Dinh
Foisal, Abu Riduan Md
Hoang-Phuong, Phan
Tuan-Khoa, Nguyen
Nam-Trung, Nguyen
Dzung, Viet Dao
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2019
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Enhancing the piezoresistive effect is crucial for improving the sensitivity of mechanical sensors. Herein, we report that the piezoresistive effect in a semiconductor heterojunction can be enormously enhanced via optoelectronic coupling. A lateral photovoltage, which is generated in the top material layer of a heterojunction under non-uniform illumination, can be coupled with an optimally tuned electric current to modulate the magnitude of the piezoresistive effect. We demonstrate a tuneable giant piezoresistive effect in a cubic silicon carbide/silicon heterojunction, resulting in an extraordinarily high gauge factor of approximately 58,000, which is the highest gauge factor reported for semiconductor-based mechanical sensors to date. This gauge factor is approximately 30,000 times greater than that of commercial metal strain gauges and more than 2,000 times greater than that of cubic silicon carbide. The phenomenon discovered can pave the way for the development of ultra-sensitive sensor technology.

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Nature Communications

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10

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1

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© The Author(s) 2019. This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.

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Physical sciences

Nanomaterials

Nanotechnology

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Thanh, N; Toan, D; Foisal, ARM; Hoang-Phuong, P; Tuan-Khoa, N; Nam-Trung, N; Dzung, VD, Giant piezoresistive effect by optoelectronic coupling in a heterojunction, Nature Communications, 2019, 10 (1)

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