SiC-based Piezoelectric Energy Harvester for Extreme Environment

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Kudimi, Jagan Mohan Reddy
Mohd-Yasin, Faisal
Dimitrijev, Sima
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Walczak, R

Dziuban, J

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2012
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Abstract

This paper explores the feasibility of employing cubic silicon carbide on silicon wafer (3C-SiC-on-Si) as a vertical cantilever for the piezoelectric-based energy harvesting in the d31 mode intended for the extreme environments. 100nm thick 3C-SiC layer is plasma-etched out of the <100> silicon (Si) wafer and is employed as a bottom electrode, 1孠thick Aluminum nitride (AlN) as a piezoelectric thin film (active layer) and 50nm thick Molybdenum is sputtered on top of the cantilever structure as a top electrode. The length and width of the cantilever beam are 400孠and 30孬 respectively. The performances of the energy harvester using 3C-SiC and Si as bottom electrode and substrate are simulated and compared. The generated output voltage at 1KO load resistance is 7.85 times higher for the 3C-SiC based device. Additional tests at higher temperatures show 3C-SiC superior performances in terms of generated power and material strength.

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Procedia Engineering

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47

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© 2012 The Authors. Published by Elsevier Ltd. Open access under the Creative Commons Attribution-NonCommercial-NoDerivs 3.0 Unported (CC BY-NC-ND 3.0) License which permits unrestricted, non-commercial use, distribution and reproduction in any medium, providing that the work is properly cited. You may not alter, transform, or build upon this work.

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Engineering

Microelectronics

Microelectromechanical systems (MEMS)

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