Single-crystalline 3C-SiC thin-film on large Si substrate for photonic applications
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Author(s)
Wang, L
Chai, J
Walker, G
Hold, L
Lobino, M
Dimitriev, S
Iacopi, A
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Nano Science and Technology Institute
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Washington, DC; United States
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Abstract
This paper presents an unique low-temperature chemical vapor deposition process developed at Griffith University that enables the hetero-epitaxial growth of uniform single-crystalline cubic silicon carbide thin-film on very large silicon substrate. This technology, combined with the unique properties of silicon carbide, opens new opportunities for photonic applications on silicon.
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Technical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014
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Volume
2
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© 2014 NSTI http://nsti.org. Reprinted and revised, with permission, from the Nanotechnology 2014: MEMS, Fluidics, Bio Systems, Medical, Computational & Photonics (Volume 2), pp. 416-419, 15-18 Jun 2014, Washington DC, U.S.A.
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Subject
Photonics, optoelectronics and optical communications