Glitches of positive current at negative voltages have been observed during current–voltage measurements of metal–oxide semiconductor capacitors. The magnitude of the glitches depends on both stepping rate and duration of holding the metal electrode at the most negative potential before stepping towards positive potentials is initiated. Current versus time measurements show a voltage‐dependent time constant, generally ≳100 ms. Charging/discharging of border traps is suggested as a possible cause for this effect.