Polytype Control in 6H-SiC Grown via Sublimation Method
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Author(s)
Jiang, Shouzheng
Hu, Xiaobu
Dong, Jie
Li, Juan
Chen, Xiufang
Wang, Li
Xu, Xiangang
Jiang, Minhua
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Robert P. Devaty, David J. Larkin, Stephen E. Saddow
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Abstract
6H-SiC ingots were grown with different growth interfaces at different rates via the sublimation method. A model for the step flow growth mechanism is proposed to interpret the occurrence of 15R-SiC inclusions in the 6H-SiC single crystal. The results show that the 15R-SiC occurs more easily on the convex and the concave interface than on the slight convex interface and 15R-SiC inclusion also occurs when the growth rate of 6H-SiC exceeds the critical rate of 300 %m/h with the slight convex interface at the seed temperature 2250î
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Materials Science Forum
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527-529
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Self-archiving of the author-manuscript version is not yet supported by this journal. Please refer to the journal link for access to the definitive, published version or contact the author[s] for more information.
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Surfaces and Structural Properties of Condensed Matter
Physical Chemistry (incl. Structural)
Materials Engineering