A Method for Extraction of Electron Mobility in Power HEMTs

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Arninbeidokhti, Amirhossein
Dimitrijev, Sima
Han, Jisheng
Xu, Xiangang
Wang, Chengxin
Qu, Shuang
Moghadam, Hamid Amini
Tanner, Philip
Massoubre, David
Walker, Glenn
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2015
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Abstract

In this paper, a novel method for extraction of electron mobility in the two-dimensional electron gas (2DEG) under the gate of power HEMTs is presented. Using this method enables the potential impact of the gate metal and the gate voltage on electron mobility in the 2DEG under the gate to be measured without the error due to the resistive regions outside the gate, which are the gate-to-source and gate-to-drain regions. The application of the new method was demonstrated by measurements on fabricated circular HEMTs.

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Superlattices and Microstructures
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85
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Condensed matter physics
Atomic, molecular and optical physics
Quantum physics
Microelectronics
Electronics, sensors and digital hardware
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