There is a rising demand for power MOSFET semiconductors with low power consumption and high energy efficiency. Wide band-gap semiconductor materials Gallium nitride (GaN) and Silicon Carbide (SiC) achieve the need of low power consumption and high energy efficiency. GaN and SiC based power devices with satisfying performance are commercially available now. These devices are found to be more efficient as compared to their Si counterpart because of their several advantages such as operated at faster switching speed, high temperature, high voltage, lower ON-resistance and smaller size. The paper shows the performance comparison between Si, SiC and GaN based power MOSFET/HEMT are performed with the help of LTSPICE simulation software by considering a DC-DC Boost converter. It can be observed that the efficiency of the converter primarily increases when GaN and SiC switches are used for switching.