Current mechanisms in n-SiC/p-Si heterojunctions

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Author(s)
Tanner, Philip
Dimitrijev, Sima
Harrison, H Barry
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Lorenzo Faraone, Michael Cortie, Andres Cuevas, John Dell

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2008
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101214 bytes

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Sydney, AUSTRALIA

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Abstract

Current-voltage characteristics of 3C-SiC/Si heterojunction diodes are presented with reverse breakdown voltage exceeding 200V, leakage current of 1.3mAcm-2 at 200V, and a +/-1V rectification ratio of 200,000. The reverse leakage current was observed to have both temperature and field dependence and hence a model is presented to explain this observation based on a trap assisted tunneling-thermal emission mechanism located at the SiC/Si interface. With further improvements in the SiC crystal quality at the silicon interface, trap concentrations and thus reverse bias leakage currents will be reduced.

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COMMAD: 2008 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS & DEVICES

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© 2008 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.

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Microelectronics

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