Direct Measurement of Active Near-Interface Traps in the Strong-Accumulation Region of 4H-SiC MOS Capacitors

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Pande, Peyush
Dimitrijev, Sima
Haasmann, Daniel
Moghadam, Hamid Amini
Tanner, Philip
Han, Jisheng
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2018
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This brief presents direct electrical measurement of active defects in the strong-accumulation region of N-type 4H-SiC MOS capacitors, which corresponds to the strong-inversion region of N-channel MOSFETs. The results demonstrate the existence of an active defect in the gate oxide, located very close to the SiC surface, with localized energy levels between 0.13 eV and 0.23 eV above the bottom of the conduction band. The observed spatial and energy localizations indicates that this is a well-defined defect.

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IEEE Journal of the Electron Devices Society

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6

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© 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

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Electrical engineering

Electronics, sensors and digital hardware

Nanotechnology

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