Pushing the Limits of Piezoresistive Effect by Optomechanical Coupling in 3C-SiC/Si Heterostructure

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Foisal, Abu Riduan Md
Qamar, Afzaal
Hoang-Phuong, Phan
Toan, Dinh
Khoa-Nguyen, Tuan
Tanner, Philip
Streed, Erik W
Dzung, Viet Dao
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2017
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Abstract

This letter reports a giant opto-piezoresistive effect in p-3C-SiC/p-Si heterostructure under visible-light illumination. The p-3C-SiC/p-Si heterostructure has been fabricated by growing a 390 nm p-type 3C-SiC on a p-type Si substrate using the low pressure chemical vapor deposition (LPCVD) technique. The gauge factor of the heterostructure was found to be 28 under a dark condition; however, it significantly increased to about −455 under illumination of 635 nm wavelength at 3.0 mW/cm2. This gauge factor is over 200 times higher than that of commercial metal strain gauge, 16 times higher than that of 3C-SiC thinfilm, and approximately 5 times larger than that of bulk Si. This enhancement of the gauge factor was attributed to the opto-mechanical coupling effect in p-3C-SiC/p-Si heterostructure. The opto-mechanical coupling effect is the amplified effect of the photoconductivity enhancement and strain-induced band structure modification in the p-type Si substrate. These findings enable extremely high sensitive and robust mechanical sensors, as well as optical sensors at low cost, as no complicated nanofabrication process is required.

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ACS Applied Materials & Interfaces
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This document is the Postprint: Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Materials & Interfaces, © 2017 American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see 10.1021/acsami.7b12128
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Microelectromechanical systems (MEMS)
Electronic sensors
Physical sciences
Chemical sciences
Engineering
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