Specific contact resistance of ohmic contacts to n-type SiC membranes

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Author(s)
Mohd Nasir, NF
Holland, AS
Reeves, GK
Leech, PW
Collins, A
Tanner, P
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M. Baklanov, G. Dubois, C. Dussarrat, T. Kokubo, S. Ogawa

Date
2012
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591563 bytes

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San Francisco, United States

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Abstract

Membranes of epitaxial SiC have been used as a means of eliminating the leakage current into the Si substrate during circular transmission line model (CTLM) measurements. In the n+-3C-SiC/Si wafers, the Si substrate was etched in a patterned window with dimensions up to 10 mm נ15 mm2. An array of CTLM metal contacts was then deposited onto the upper surface of the n+-SiC membrane. The CTLM contacts on the membrane have shown an ohmic current/voltage response while electrodes located on the adjacent substrate were non-ohmic. Values of ?c were measured directly on the membranes. These results have shown a significant increase in the current flow below the metal contacts due to the presence of the Si substrate.

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Materials Research Society Symposium Proceedings

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1335

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© 2011 Materials Research Society, published by Cambridge University Press. The attached file is reproduced here in accordance with the copyright policy of the publisher. Please refer to the conference's website for access to the definitive, published version.

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Electrical and Electronic Engineering not elsewhere classified

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