Silicon Carbide membranes as substrate for Synchrotron measurements
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Iacopi, Alan
Hold, Leonie
Matruglio, A
Zucchiatti, P
Vaccari, L
Bedolla, D
Ulloa Severino, L
Parisse, P
Gianoncelli, A
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Abstract
Silicon Nitride (SiN) membranes have long been the substrate of choice for many different synchrotron techniques at very different wavelengths (from IR to hard X-rays), due to their ease of production, relative robustness even in films <200 nm in thickness, and compatibility with standard microfabrication techniques. Here we present a set of data referring to custom-made Silicon Carbide (SiC) windows. We measured SiC surface roughness, mechanical robustness and membrane transmission both at IR and soft X-rays wavelengths, and compared the data with standard Si3N4, acquired in the same conditions. Further, we grew HEK293T cells both on Si3N4 and SiC membranes, and analysed them with IR and soft X-ray microscopy. Our data demonstrates how SiC is an excellent choice as membrane material for synchrotron measurements, since it shows higher transmission and higher robustness as compared to Si3N4 of the same thickness, and an improved compatibility for cell culturing, allowing to postulate their use also for bio-oriented research.
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Journal of Instrumentation
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13
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5
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© 2018 Institute of Physics Publishing. This is the author-manuscript version of this paper. Reproduced in accordance with the copyright policy of the publisher.Please refer to the journal's website for access to the definitive, published version.
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Photonics, Optoelectronics and Optical Communications
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Engineering