Transient-Current Method for Measurement of Active Near-Interface Oxide Traps in 4H-SiC MOS Capacitors and MOSFETs

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Moghadam, Hamid Amini
Dimitrijev, Sima
Han, Jisheng
Haasmann, Daniel
Aminbeidokhti, Amirhossein
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2015
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Abstract

Measurements of the near-interface oxide traps (NIOTs) aligned to the conduction band of silicon-carbide (SiC) are of particular importance as these active defects are responsible for degradation of the channel-carrier mobility in 4H-SiC MOSFETs. In this brief, a new method for measurement of the active NIOTs with energy levels aligned to the conduction band is proposed. The method utilizes transient-current measurements on 4H-SiC MOS capacitors biased in accumulation. Nitrided oxide and dry oxide are used to illustrate the applicability of the proposed measurement method.

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IEEE Transactions on Electron Devices

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62

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8

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Electronics, sensors and digital hardware

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