Integration of Silicon-Carbide Schottky Diodes with High-Frequency Transformer
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Parveen, Tania
Lu, Junwei
Seagar, Andrew
Bai, Feifei
Taghizadeh, Foad
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Melbourne, Australia
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Abstract
This paper presents a novel and compact structure of integrated silicon-carbide (SiC) Schottky diodes with highfrequency (HF) transformer. A prototype HF transformer in the shape that is similar to a tokamak is designed for the integration with SiC Schottky diodes. The modular-based unique structure of HF transformer can be designed and optimised for the integration with various SiC devices. The three-dimensional (3- D) finite element method (FEM) simulation technique is used to design and analyse the magnetic structure of HF transformer taking into account the space for SiC devices. The experimental results including the HF transformer itself and SiC Schottky diodes integrated with HF transformer are presented.
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14th IEEE PES Asia-Pacific Power and Energy Engineering Conference
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© 2022 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
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Electrochemical energy storage and conversion
high frequency transformer
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Yao, W; Parveen, T; Lu, J; Seagar, A; Bai, F; Taghizadeh, F, Integration of Silicon-Carbide Schottky Diodes with High-Frequency Transformer, 14th IEEE PES Asia-Pacific Power and Energy Engineering Conference, 2022