Comments on “Substrate-bias-dependent threshold-voltage model of short-channel MOSFET”
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DIMITRIJEV, S
ZUPAC, D
STOJADINOVIC, D
ZUPAC, D
STOJADINOVIC, D
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1995
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Abstract
The note(!], in which an expression for the threshold voltage of short-channel MOSFETs is derived, is in good part based on our letter[2], in which an expression for the drain current of short-channel MOSFETs is derived. The basic idea, the use of Gauss's law to determine the depletion-layer charge controlled by the gate voltage, is the same.
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Solid-state Electronics
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38
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1
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Condensed matter physics
Atomic, molecular and optical physics
Environmental sciences