Passivation of Very Fast Near-Interface Traps at the 4H-SiC/SiO2 Interface Using Sodium Enhanced Oxidation

Loading...
Thumbnail Image
File version

Version of Record (VoR)

Author(s)
Vidarsson, AM
Haasmann, D
Dimitrijev, S
Sveinbjörnsson, E
Griffith University Author(s)
Primary Supervisor
Other Supervisors
Editor(s)
Date
2023
Size
File type(s)
Location

Davos, Switzerland

Abstract

The channel carrier mobility in commercially available 4H-SiC MOSFETs with NO annealed gate oxides is still far below the theoretical limit. It has been suggested that the main reason is high density of very fast interface traps, labeled NI, located inside the oxide very close to the SiC conduction band edge. The NI traps are usually not observed at room temperature but can be detected at cryogenic temperatures. In this study we use conductance spectroscopy and high-low CV analysis of MOS-capacitors at cryogenic temperatures to show that the very fast NI traps are practically absent in oxides grown using sodium enhanced oxidation.

Journal Title
Conference Title

International Conference on Silicon Carbide and Related Materials ICSCRM 2022

Book Title
Edition
Volume
Issue
Thesis Type
Degree Program
School
DOI
Patent number
Funder(s)
Grant identifier(s)
Rights Statement
Rights Statement

© The Author(s) 2023. Published by Trans Tech Publications Ltd, Switzerland. This article is an open access article under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0)

Item Access Status
Note
Access the data
Related item(s)
Subject

Macromolecular materials

Nanomaterials

Materials engineering

Persistent link to this record
Citation

Vidarsson, AM; Haasmann, D; Dimitrijev, S; Sveinbjörnsson, E, Passivation of Very Fast Near-Interface Traps at the 4H-SiC/SiO2 Interface Using Sodium Enhanced Oxidation, International Conference on Silicon Carbide and Related Materials ICSCRM 2022, 2023, pp. 379-383