Passivation of Very Fast Near-Interface Traps at the 4H-SiC/SiO2 Interface Using Sodium Enhanced Oxidation
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Haasmann, D
Dimitrijev, S
Sveinbjörnsson, E
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Davos, Switzerland
Abstract
The channel carrier mobility in commercially available 4H-SiC MOSFETs with NO annealed gate oxides is still far below the theoretical limit. It has been suggested that the main reason is high density of very fast interface traps, labeled NI, located inside the oxide very close to the SiC conduction band edge. The NI traps are usually not observed at room temperature but can be detected at cryogenic temperatures. In this study we use conductance spectroscopy and high-low CV analysis of MOS-capacitors at cryogenic temperatures to show that the very fast NI traps are practically absent in oxides grown using sodium enhanced oxidation.
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International Conference on Silicon Carbide and Related Materials ICSCRM 2022
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© The Author(s) 2023. Published by Trans Tech Publications Ltd, Switzerland. This article is an open access article under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0)
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Macromolecular materials
Nanomaterials
Materials engineering
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Vidarsson, AM; Haasmann, D; Dimitrijev, S; Sveinbjörnsson, E, Passivation of Very Fast Near-Interface Traps at the 4H-SiC/SiO2 Interface Using Sodium Enhanced Oxidation, International Conference on Silicon Carbide and Related Materials ICSCRM 2022, 2023, pp. 379-383