Micro-structured light emission from planar InGaN light-emitting diodes

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Author(s)
Massoubre, David
Xie, Enyuan
Guilhabert, Benoit
Herrnsdorf, Johannes
Gu, Erdan
M. Watson, Ian
D. Dawson, Martin
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2014
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Abstract

Investigation of the surface modification of the p-type layer in GaN light-emitting diodes (LEDs) by exposure to a trifluoromethane plasma is reported. It is found that the plasma treatment reduces the conductivity of the p-GaN by several orders of magnitude, and when applied at room-temperature through a patterned mask, localized current channels into the active region of a p-i-n device are created. This provides a novel approach to laterally modulate the light emission from an LED over essentially planar areas. This technique allows the projection of high-resolution images from non-pixelated devices, and an example application of maskless pattern transfer with sub-micron features into photoresist is demonstrated.

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Semiconductor Science and Technology
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29
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1
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© 2014 Institute of Physics Publishing. This is the author-manuscript version of this paper. Reproduced in accordance with the copyright policy of the publisher.Please refer to the journal's website for access to the definitive, published version.
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Materials Engineering not elsewhere classified
Condensed Matter Physics not elsewhere classified
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Engineering
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