Avoidance of Stiction in the Release of Highly Boron Doped Micro-actuators Fabricated using BESOI Substrates

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Rosa, MA
Dimitrijev, S
Harrison, HB
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1999
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Abstract

This paper presents a new technique which has been successfully applied to the fabrication of micromachined components to avoid the ‘device stiction’ often encountered during the final processing steps of micro-fabrication. Based on the use of BESOI substrates, this technique involves the heavy boron doping of the final processed structure, followed by a timed wet etch which releases the micromachined device by controllably lowering the undoped Si substrate beneath it.

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Microelectronics Reliability

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39

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1

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Electronics, sensors and digital hardware

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